SiHLI640G-E3
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Краткое описание:
N-CH MOSFET 200V 9.9A TO-220 Full-Pak
Дополнительная информация
N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 200V and continuous drain current of 9.9A. Features a low drain-source on-resistance of 180mΩ at 5V gate-source voltage. This through-hole component is housed in a TO-220 Full-Pak package with a pin pitch of 2.54mm. Maximum power dissipation is 40000mW, operating temperature range is -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 Full-Pak |
| AEC Qualified | No |
| Configuration | Single |
| Pin Pitch (mm) | 2.54 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.12(Max) |
| Package Length (mm) | 10.63(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.62(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 66(Max)nC |
| Typical Gate Charge @ Vgs | 66(Max)@10VnC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 180@5VmOhm |
| Typical Input Capacitance @ Vds | 1800@25VpF |
| Maximum Continuous Drain Current | 9.9A |
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