SiHLIZ14G-E3
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Краткое описание:
N-CH MOSFET 60V 8A TO-220 Full-Pak
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 8A continuous drain current. This single-element transistor is housed in a TO-220 Full-Pak through-hole package with a 2.54mm pin pitch. Key specifications include a maximum drain-source on-resistance of 200mΩ at 5V, typical gate charge of 8.4nC at 5V, and typical input capacitance of 400pF at 25V. Maximum power dissipation is 27000mW, with an operating temperature range of -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 Full-Pak |
| AEC Qualified | No |
| Configuration | Single |
| Pin Pitch (mm) | 2.54 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.12(Max) |
| Package Length (mm) | 10.63(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.62(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 27000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 8.4(Max)@5VnC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 200@5VmOhm |
| Typical Input Capacitance @ Vds | 400@25VpF |
| Maximum Continuous Drain Current | 8A |
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