TD62008AFG(5,EL)

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TD62008AFG(5,EL) - Toshiba
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Краткое описание: NPN BJT Array 7-Element 50V 0.4A 625mW SOP-16
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The TD62008AFG(5,EL) is a surface mount NPN bipolar junction transistor array with 7 elements. It features a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 0.4A. The device has a maximum power dissipation of 625mW and a minimum DC current gain of 1000 at 350mA and 4V. It is packaged in a plastic small outline package (SOP) with 16 leads and is suitable for operation over a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Mounting Surface Mount
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SOP
AEC Qualified No
Configuration Array 7
RoHS Versions 2002/95/EC
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 10.5(Max)
Radiation Hardening No
Minimum DC Current Gain 1000@350mA@4V
Seated Plane Height (mm) 1.9(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 625mW
Min Operating Temperature -40°C
Number of Elements per Chip 7
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 0.4A

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