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Краткое описание:
NPN BJT Transistor 35V 0.2A 16-Pin PDIP Array 7
Дополнительная информация
NPN bipolar junction transistor array featuring 7 elements in a 16-pin PDIP through-hole package. This silicon component offers a maximum collector-emitter voltage of 35V and a maximum DC collector current of 0.2A. With a minimum DC current gain of 70 at 10mA and 10V, it is suitable for applications requiring up to 1000mW of power dissipation. The package dimensions are 19.75mm (max) length, 6.4mm width, and 3.5mm height, with a 2.54mm pin pitch. Operating temperature range is -40°C to 85°C.
| PCB | 16 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Jedec | MS-001BB |
| Category | Bipolar Power |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 16 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Package/Case | PDIP |
| AEC Qualified | No |
| Configuration | Array 7 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 6.4 |
| Package Description | Plastic Dual In Line Package |
| Package Family Name | DIP |
| Package Height (mm) | 3.5 |
| Package Length (mm) | 19.75(Max) |
| Radiation Hardening | No |
| Minimum DC Current Gain | 70@10mA@10V |
| Seated Plane Height (mm) | 4.15 |
| Max Operating Temperature | 85°C |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -40°C |
| Number of Elements per Chip | 7 |
| Maximum DC Collector Current | 0.2A |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector-Emitter Voltage | 35V |
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