TD62501P(J,NDENSK)

Снят с производства
TD62501P(J,NDENSK) - Toshiba
Краткое описание: NPN BJT Array 35V 0.2A 16-Pin PDIP Through Hole
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor array featuring 7 elements per chip. Maximum collector-emitter voltage is 35V with a maximum DC collector current of 0.2A. This through-hole component is housed in a 16-pin PDIP package with a 2.54mm pin pitch. Maximum power dissipation is 1000mW, and it operates within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
Category Bipolar Power
Material Si
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Array 7
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Minimum DC Current Gain 70@10mA@10V
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -40°C
Number of Elements per Chip 7
Maximum DC Collector Current 0.2A
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 35V

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