TD62505PG(5,J)

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TD62505PG(5,J) - Toshiba
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Краткое описание: NPN BJT Array 35V 0.2A 16-Pin PDIP Through Hole
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor array featuring 7 elements, designed for through-hole mounting. This component offers a maximum collector-emitter voltage of 35V and a maximum DC collector current of 0.2A, with a maximum power dissipation of 1000mW. It boasts a minimum DC current gain of 50 at 10mA and 10V. Encased in a 16-pin PDIP plastic package with a 2.54mm pin pitch, it operates within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
Category Bipolar Power
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Array 7
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Minimum DC Current Gain 50@10mA@10V
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -40°C
Number of Elements per Chip 7
Maximum DC Collector Current 0.2A
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 35V

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