TD62507FG(5,EL)

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TD62507FG(5,EL) - Toshiba
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Краткое описание: NPN BJT Quint 35V 0.2A 16-Pin SOP SMT
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) quint configuration, featuring a 35V maximum collector-emitter voltage and 0.2A maximum DC collector current. This surface-mount device is housed in a 16-pin SOP (Small Outline Package) with gull-wing leads, measuring 10.5mm x 4.4mm x 1.5mm. It offers a minimum DC current gain of 50 at 10mA/10V and a maximum power dissipation of 625mW, operating within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
Mounting Surface Mount
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SOP
AEC Qualified No
Configuration Quint
RoHS Versions 2002/95/EC
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 10.5(Max)
Radiation Hardening No
Minimum DC Current Gain 50@10mA@10V
Seated Plane Height (mm) 1.9(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 625mW
Min Operating Temperature -40°C
Number of Elements per Chip 5
Maximum DC Collector Current 0.2A
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 35V

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