TD62595AP(5)

Снят с производства
TD62595AP(5) - Toshiba
Краткое описание: NPN BJT Octal Transistor 50V 0.2A 18-Pin PDIP Through Hole
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) with octal configuration, featuring a 50V collector-emitter voltage and 0.2A maximum collector current. This through-hole component is housed in an 18-pin PDIP package (MS-001AC) with a maximum power dissipation of 1470mW. It offers a minimum DC current gain of 70 at 10mA and 10V, operating within a temperature range of -40°C to 85°C.
PCB 18
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001AC
Category Bipolar Power
Mounting Through Hole
Cage Code S0562
Pin Count 18
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Octal
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 24.6
Radiation Hardening No
Minimum DC Current Gain 70@10mA@10V
Max Operating Temperature 85°C
Maximum Power Dissipation 1470mW
Min Operating Temperature -40°C
Number of Elements per Chip 8
Maximum DC Collector Current 0.2A
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 50V

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