TD62783AFN(F,S)

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TD62783AFN(F,S) - Toshiba
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Краткое описание: Octal NPN/PNP BJT, 50V, 0.5A, 960mW, SSOP-18
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The Toshiba TD62783AFN(F,S) is an octal common emitter bipolar junction transistor with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 0.5A. It has a maximum power dissipation of 960mW and is packaged in a shrink small outline package (SSOP) with 18 leads. The transistor is suitable for surface mount applications and has a minimum operating temperature of -40°C and a maximum operating temperature of 85°C.
PCB 18
ECCN EAR99
PPAP No
Type NPN|PNP
EU RoHS Yes
Mounting Surface Mount
Cage Code S0562
Pin Count 18
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SSOP
AEC Qualified No
Configuration Octal Common Emitter
RoHS Versions 2002/95/EC
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.09
Package Width (mm) 4.4
Package Description Shrink Small Outline Package
Package Family Name SOP
Package Height (mm) 1.2
Package Length (mm) 6.8(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.5(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 960mW
Min Operating Temperature -40°C
Number of Elements per Chip 8
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 0.5A
Maximum Collector-Emitter Saturation Voltage 1.8@100mA|1.9@225mA|2@350mAV

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