TD62783APG(J,S)

Снят с производства
TD62783APG(J,S) - Toshiba
Краткое описание: NPN/PNP Octal Common Emitter BJT, 8 Elements, 0.5A, 1470mW, PDIP-18
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The Toshiba TD62783APG(J,S) is an NPN/PNP octal common emitter bipolar junction transistor in a plastic dual in-line package. It has 18 pins and a maximum power dissipation of 1470 milliwatts. The device is rated for a maximum continuous collector current of 0.5 amperes and can operate over a temperature range of -40 to 85 degrees Celsius. The transistor is mounted through a hole and is suitable for use in a variety of applications.
PCB 18
ECCN EAR99
PPAP No
Type NPN|PNP
Jedec MS-001AC
EU RoHS Yes
Mounting Through Hole
Cage Code S0562
Pin Count 18
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Octal Common Emitter
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 25.1(Max)
Radiation Hardening No
Seated Plane Height (mm) 4.15(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 1470mW
Min Operating Temperature -40°C
Number of Elements per Chip 8
Maximum Continuous DC Collector Current 0.5A
Maximum Collector-Emitter Saturation Voltage 1.8@100mA|1.9@225mA|2@350mAV

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