TD62787AP(5)
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Краткое описание:
NPN/PNP Octal BJT, 50V, 0.5A, 1470mW, PDIP-18
Дополнительная информация
The Toshiba TD62787AP(5) is a through-hole mounted, plastic dual in-line package (PDIP) bipolar junction transistor (BJT) with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 0.5A. The transistor has a maximum power dissipation of 1470mW and a minimum DC current gain of 1000 at 350mA and 3V. The operating temperature range is -40 to 85 degrees Celsius.
| PCB | 18 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN|PNP |
| Jedec | MS-001AC |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 18 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Package/Case | PDIP |
| AEC Qualified | No |
| Configuration | Octal |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 6.4 |
| Package Description | Plastic Dual In Line Package |
| Package Family Name | DIP |
| Package Height (mm) | 3.5 |
| Package Length (mm) | 24.6 |
| Radiation Hardening | No |
| Minimum DC Current Gain | 1000@350mA@3V |
| Max Operating Temperature | 85°C |
| Maximum Power Dissipation | 1470mW |
| Min Operating Temperature | -40°C |
| Number of Elements per Chip | 8 |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 0.5A |
| Maximum Collector-Emitter Saturation Voltage | 1.8@100mA|2@350mAV |
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