TIP35CG

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TIP35CG - Onsemi
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Краткое описание: 100V 25A NPN BJT Power Transistor, TO-247
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in TO-247 package. Features a 100V collector-emitter breakdown voltage, 25A continuous collector current, and 125W power dissipation. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C. This RoHS compliant component is supplied in a 30-piece tube.
RoHS Compliant
Width 0.193inch
Height 0.801inch
Length 0.599inch
hFE Min 25
Polarity NPN
Frequency 3MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-247-3
Max Frequency 3MHz
Current Rating 25A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 30
Power Dissipation 125W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 3MHz
Max Collector Current 25A
Max Power Dissipation 125W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 4V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.8V

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