TIP35CW

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TIP35CW - Stmicroelectronics
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Краткое описание: 100V 25A NPN/PNP BJT Transistor TO-247 125W
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Complementary power transistors designed for through-hole mounting in a TO-247 package. Featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 25A, these NPN and PNP devices offer a maximum power dissipation of 125W. With a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz, they operate across a wide temperature range from -65°C to 150°C. These RoHS compliant and lead-free components are supplied in rail/tube packaging.
RoHS Compliant
Mount Through Hole
hFE Min 25
Polarity NPN, PNP
Frequency 3MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-247
Max Frequency 3MHz
Current Rating 25A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 600
Power Dissipation 125W
Number of Elements 1
Radiation Hardening No
Transition Frequency 3MHz
Max Collector Current 25A
Max Power Dissipation 125W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 4V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V

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