TK12E60W,S1VX

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TK12E60W,S1VX - Toshiba
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Краткое описание: N-CHANNEL MOSFET TO-220 600V 11.5A 110W
Производитель Toshiba
Категория Транзисторы
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TK12E60W,S1VX is a TO-220 packaged N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 11.5A and a maximum power dissipation of 110W. The device has a drain to source breakdown voltage of 600V and a drain to source resistance of 300mR. It also features an input capacitance of 890pF and a gate to source voltage of 30V.
RoHS Compliant
Mount Through Hole
Polarity N-CHANNEL
Fall Time 5.5ns
Packaging Rail/Tube
Rds On Max 300mR
Package/Case TO-220
Package Quantity 50
Input Capacitance 890pF
Power Dissipation 110W
Number of Elements 1
Radiation Hardening No
Turn-Off Delay Time 85ns
Max Power Dissipation 110W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 300mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 11.5A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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