TK12Q60W,S1VQ
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Краткое описание:
N-CHANNEL MOSFET 600V 11.5A 100W TO-251-3 Through Hole
Дополнительная информация
The Toshiba TK12Q60W,S1VQ is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source voltage of 600V and a continuous drain current of 11.5A. The device has a maximum power dissipation of 100W and a fall time of 5.5ns. It is packaged in a TO-251-3 case and is suitable for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | DTMOSIV |
| Polarity | N-CHANNEL |
| Fall Time | 5.5ns |
| Packaging | Rail/Tube |
| Rds On Max | 340mR |
| Resistance | 0.34R |
| Capacitance | 8.9E-10F |
| Package/Case | TO-251-3 |
| Package Quantity | 75 |
| Input Capacitance | 890pF |
| Turn-Off Delay Time | 85ns |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 265mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Voltage (Vdss) | 600V |
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