TK20E60W,S1VX
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Краткое описание:
N-CHANNEL MOSFET 600V 20A TO-220-3 Through Hole
Дополнительная информация
The Toshiba TK20E60W MOSFET features a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 165W. It has a continuous drain current of 20A and a drain to source voltage of 600V. The device is packaged in a TO-220-3 case and is mounted through a hole. It has a gate to source voltage of 30V and an input capacitance of 1.68nF.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | TK20E60W |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Packaging | Rail/Tube |
| Rds On Max | 155mR |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Input Capacitance | 1.68nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 165W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
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