TK20J60U(F)
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Краткое описание:
600V 20A N-CH MOSFET, 190mR Rds On, 190W PD
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This through-hole component offers a low 190mΩ drain-source on-resistance and 190W maximum power dissipation. Designed for high-voltage applications, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay of 80ns and fall time of 12ns. Packaged in a TO-3PN (SC) case, this RoHS compliant device is suitable for demanding power management circuits.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.8mm |
| Height | 19mm |
| Length | 40.5mm |
| Series | DTMOSII |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.47nF |
| Power Dissipation | 190W |
| Number of Elements | 1 |
| Turn-On Delay Time | 80ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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