TK31N60W,S1VF

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TK31N60W,S1VF - Toshiba
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Краткое описание: N-CHANNEL MOSFET 600V 30A 88mR 150°C TO-247-3
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK31N60W,S1VF is a high-power N-channel MOSFET with a maximum operating voltage of 600V and a continuous drain current of 30.8A. It features a drain to source resistance of 73mR and a gate to source voltage of 30V. The device is packaged in a TO-247-3 case and is suitable for through-hole mounting. The TK31N60W,S1VF is RoHS compliant and has a maximum power dissipation of 230W. It operates over a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Series DTMOSIV
Polarity N-CHANNEL
Fall Time 8.5ns
Packaging Rail/Tube
Rds On Max 88mR
Resistance 0.088R
Capacitance 3E-09F
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 3nF
Turn-Off Delay Time 165ns
Max Power Dissipation 230W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 73mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 30.8A
Drain to Source Voltage (Vdss) 600V

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