TK39N60W,S1VF

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TK39N60W,S1VF - Toshiba
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Краткое описание: N-CHANNEL MOSFET 600V 38.8A 30V TO-247-3 Through Hole
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK39N60W,S1VF is a high-power N-channel MOSFET with a maximum drain-to-source voltage of 600V and a continuous drain current of 38.8A. It features a low on-resistance of 65mR and a fast switching time with a fall time of 9ns. The device operates over a wide temperature range from -55°C to 150°C and has a maximum power dissipation of 270W. It is packaged in a TO-247-3 case and is available in quantities of 30 per rail/Tube.
RoHS Compliant
Mount Through Hole
Series DTMOSIV
Polarity N-CHANNEL
Fall Time 9ns
Packaging Rail/Tube
Rds On Max 65mR
Resistance 0.065R
Capacitance 4.1E-09F
Package/Case TO-247-3
Package Quantity 30
Input Capacitance 4.1nF
Turn-Off Delay Time 200ns
Max Power Dissipation 270W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 55mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 38.8A
Drain to Source Voltage (Vdss) 600V

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