TK5A60W,S4VX

Производится
TK5A60W,S4VX - Toshiba
Увеличить
Краткое описание: N-CHANNEL MOSFET 600V 5.4A TO-220-3 Through Hole
Производитель Toshiba
Категория Транзисторы
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Toshiba TK5A60W,S4VX is a general-purpose N-channel power MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 5.4A. The device is packaged in a TO-220-3 package and is mounted through a hole. The MOSFET has a maximum power dissipation of 30W and a gate to source voltage of 30V.
RoHS Compliant
Mount Through Hole
Polarity N-CHANNEL
Fall Time 7ns
Packaging Rail/Tube
Rds On Max 900mR
Capacitance 3.8E-10F
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 380pF
Power Dissipation 30W
Turn-Off Delay Time 50ns
Max Power Dissipation 30W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 770mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5.4A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.