TP2435N8-G

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TP2435N8-G - Microchip
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Краткое описание: P-CHANNEL MOSFET, -350V, -231mA, SOT-89-3
Производитель Microchip
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

The TP2435N8-G is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of -350V and a continuous drain current of -231mA. The device is packaged in a SOT-89-3 package and is suitable for surface mount applications. The TP2435N8-G has a maximum power dissipation of 1.6W and a fall time of 20ns.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001862oz
Polarity P-CHANNEL
Fall Time 20ns
Packaging Tape and Reel
Package/Case SOT-89-3
Package Quantity 2000
Power Dissipation 1.6W
Number of Channels 1
Turn-On Delay Time 15ns
Turn-Off Delay Time 25ns
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 15R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -231mA
Drain to Source Breakdown Voltage -350V

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