TPC8017-H(T2LTETXM

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TPC8017-H(T2LTETXM - Toshiba
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Краткое описание: N-CH MOSFET 30V 15A 8-Pin SOP SMT Power Transistor
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET in an 8-pin SOP package, featuring a 30V drain-source voltage and 15A continuous drain current. This surface-mount component offers a low drain-source on-resistance of 6.6 mOhm at 10V. It boasts a typical gate charge of 25 nC at 10V and an input capacitance of 1465 pF at 10V. The plastic package measures 5.5mm x 4.4mm x 1.5mm with a 1.27mm pin pitch.
PCB 8
ECCN EAR99
PPAP No
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 1900mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 25nC
Typical Gate Charge @ Vgs 25@10V|14@5VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 6.6@10VmOhm
Typical Input Capacitance @ Vds 1465@10VpF
Maximum Continuous Drain Current 15A

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