TPC8051-H(TE12L,VM
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Краткое описание:
N-CH MOSFET 80V 13A 8-Pin SOP Si
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 80V drain-source voltage and 13A continuous drain current. This surface-mount component is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm maximum length and 4.4mm width. Key electrical characteristics include a maximum drain-source resistance of 9.7 mOhm at 10V, typical gate charge of 85 nC at 10V, and typical input capacitance of 5800 pF at 10V. The device offers a maximum power dissipation of 1900 mW and operates across a temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Weight (g) | 0.08 |
| Package Width (mm) | 4.4 |
| Package Description | Plastic Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 1.5 |
| Package Length (mm) | 5.5(Max) |
| Seated Plane Height (mm) | 1.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 85nC |
| Typical Gate Charge @ Vgs | 85@10V|43@5VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 80V |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Drain Source Resistance | 9.7@10VmOhm |
| Typical Input Capacitance @ Vds | 5800@10VpF |
| Maximum Continuous Drain Current | 13A |
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