TPC8105-H(T2LPAVQM

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TPC8105-H(T2LPAVQM - Toshiba
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Краткое описание: P-CH MOSFET 30V 7A 8-Pin SOP Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 7A continuous drain current. This surface-mount device is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm x 4.4mm x 1.5mm. Key electrical characteristics include a maximum drain-source on-resistance of 40mΩ at 10V, typical gate charge of 32nC, and typical input capacitance of 1440pF. The MOSFET offers a maximum power dissipation of 2400mW and operates across a temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2002/95/EC
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 2400mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 32nC
Typical Gate Charge @ Vgs 32@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 40@10VmOhm
Typical Input Capacitance @ Vds 1440@10VpF
Maximum Continuous Drain Current 7A

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