TPC8125

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TPC8125 - Toshiba
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Краткое описание: P-CH MOSFET 30V 10A 8-Pin SOP Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel enhancement mode power MOSFET, silicon, featuring 30V drain-source voltage and 10A continuous drain current. This surface-mount transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.9mm x 1.52mm. It offers a low drain-source on-resistance of 13mΩ at 10V and a typical gate charge of 64nC at 10V. Maximum power dissipation is 1900mW, with an operating temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
Jedec MS-012AA
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 3.9
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.52
Package Length (mm) 4.9
Radiation Hardening No
Seated Plane Height (mm) 1.68
Max Operating Temperature 150°C
Maximum Power Dissipation 1900mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 64nC
Typical Gate Charge @ Vgs 64@10VnC
Maximum Gate Source Voltage 30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 13@10VmOhm
Typical Input Capacitance @ Vds 2580@10VpF
Maximum Continuous Drain Current 10A

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