TPC8201(T2LSONY)

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TPC8201(T2LSONY) - Toshiba
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Краткое описание: N-CH MOSFET 30V 5A Dual Dual Drain 8-Pin SOP SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET featuring a dual dual drain configuration. This surface-mount component offers a maximum drain-source voltage of 30V and a continuous drain current of 5A. It is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm in length and 4.4mm in width, with a 1.27mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 50mΩ at 10V and a maximum power dissipation of 1500mW.
PCB 8
ECCN EAR99
PPAP No
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOP
AEC Qualified No
Configuration Dual Dual Drain
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 1500mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 75nC
Typical Gate Charge @ Vgs 75@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 50@10VmOhm
Typical Input Capacitance @ Vds 3530@10VpF
Maximum Continuous Drain Current 5A

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