TPCA8106

Не рекомендуется для новых проектов
TPCA8106 - Toshiba
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Краткое описание: P-CH MOSFET 30V 40A Si SOP Advance 8-Pin SMT
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This surface-mount device is housed in an 8-pin SOP Advance package with heat sink capabilities, measuring 5mm x 5mm x 0.95mm. It offers a low drain-source on-resistance of 3.7mOhm at 10V and a maximum power dissipation of 45000mW, operating across a temperature range of -55°C to 150°C. The component is configured as a single Quad Drain Triple Source.
PCB 8
ECCN EAR99
PPAP No
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case SOP Advance
AEC Qualified No
Configuration Single Quad Drain Triple Source
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Weight (g) 0.069
Package Width (mm) 5
Package Description Heat Sinked Small-Outline No Lead
Package Family Name SOP
Package Height (mm) 0.95
Package Length (mm) 5
Radiation Hardening No
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 45000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 130nC
Typical Gate Charge @ Vgs 130@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 3.7@10VmOhm
Typical Input Capacitance @ Vds 4600@10VpF
Maximum Continuous Drain Current 40A

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