TPCA8A05-H(TE12LQM)

Снят с производства
TPCA8A05-H(TE12LQM) - Toshiba
Краткое описание: N-CH MOSFET 30V 20A SOP Advance SMT Single Quad Drain
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET, 30V drain-source voltage, 20A continuous drain current. Features 12.9mOhm maximum drain-source resistance at 10V, with typical gate charge of 15nC at 10V and input capacitance of 1300pF at 10V. This single element device is housed in an 8-pin SOP Advance surface-mount package with heat sink, measuring 5mm x 5mm x 0.95mm. Operating temperature range is -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOP Advance
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Weight (g) 0.069
Package Width (mm) 5
Package Description Heat Sinked Small-Outline No Lead
Package Family Name SOP
Package Height (mm) 0.95
Package Length (mm) 5
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 2800mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 15nC
Typical Gate Charge @ Vgs 15@10V|7.4@5VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 12.9@10VmOhm
Typical Input Capacitance @ Vds 1300@10VpF
Maximum Continuous Drain Current 20A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.