TPCP8401(TE85L,F,M
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Краткое описание:
Dual N/P-CH MOSFET, 20V/12V, 0.1A/5.5A, 8-Pin PS SMT
Дополнительная информация
Dual N-channel/P-channel enhancement mode silicon power MOSFETs in an 8-pin PS lead-frame SMT package. Features include 20V/12V drain-source voltage, ±10V/±8V gate-source voltage, and 0.1A/5.5A continuous drain current. Maximum drain-source resistance is 3000mΩ (N-ch) and 38mΩ (P-ch). Operating temperature range is -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | PS |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 2.4 |
| Package Family Name | PS |
| Package Height (mm) | 0.8 |
| Package Length (mm) | 2.9 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.8 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1960@P ChannelmW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 20@5V@P ChannelnC |
| Maximum Gate Source Voltage | ±10@N Channel|±8@P ChannelV |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20@N Channel|12@P ChannelV |
| Maximum Drain Source Resistance | 3000@4V@N Channel|[email protected]@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 9.3@3V@N Channel|1520@10V@P ChannelpF |
| Maximum Continuous Drain Current | 0.1@N Channel|5.5@P ChannelA |
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