TPCP8901(TE85L,F,M

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TPCP8901(TE85L,F,M - Toshiba
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Краткое описание: NPN/PNP BJT Transistor, 100V 1A 480mW Surface Mount
Производитель Toshiba
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TPCP8901 is a dual NPN/PNP bipolar junction transistor with a collector base voltage rating of 100V and a maximum collector current of 1A. It has a maximum power dissipation of 480mW and operates over a temperature range of -55°C to 150°C. The transistor is available in a surface mount package and is packaged in tape and reel quantities of 3000.
RoHS Compliant
Mount Surface Mount
Polarity NPN, PNP
Packaging Tape and Reel
Package Quantity 3000
Power Dissipation 480mW
Number of Elements 2
Radiation Hardening No
Max Collector Current 1A
Max Power Dissipation 480mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 50V
Collector Emitter Voltage (VCEO) 50V

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