TPCS8302(T2LMATUS)
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Краткое описание:
P-CH MOSFET 20V 5A 8-Pin TSSOP Dual
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a dual dual source configuration. This surface-mount device offers a maximum drain-source voltage of 20V and a continuous drain current of 5A. Housed in an 8-pin TSSOP package with gull-wing leads, it boasts a low profile with a maximum height of 0.85mm and a pin pitch of 0.65mm. Key electrical characteristics include a maximum drain-source on-resistance of 35mΩ at 4.5V and a typical gate charge of 28.5nC at 5V.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TSSOP |
| AEC Qualified | No |
| Configuration | Dual Dual Source |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.4 |
| Package Description | Thin Shrink Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 0.85 |
| Package Length (mm) | 3.3(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.9 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1100mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 28.5@5VnC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 1590@10VpF |
| Maximum Continuous Drain Current | 5A |
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