TPN8R903NL,LQ

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TPN8R903NL,LQ - Toshiba
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Краткое описание: N-CHANNEL MOSFET 20A 30V 8.9mR Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TPN8R903NL,LQ is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 700mW and a maximum drain to source voltage of 30V. The device features a drain to source resistance of 10.2mR and a gate to source voltage of 20V. It also has an input capacitance of 820pF and a fall time of 2.1ns.
RoHS Compliant
Mount Surface Mount
Polarity N-CHANNEL
Fall Time 2.1ns
Packaging Tape and Reel
Rds On Max 8.9mR
Package Quantity 3000
Input Capacitance 820pF
Number of Channels 1
Turn-On Delay Time 8.3ns
Radiation Hardening No
Turn-Off Delay Time 14ns
Max Power Dissipation 700mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 10.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 30V

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