TSC966CT B0

Снят с производства
TSC966CT B0 - Taiwan Semiconductor
Краткое описание: NPN BJT 400V 0.3A TO-92 Single Transistor
Производитель Taiwan Semiconductor
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 400V maximum collector-emitter voltage and 0.3A maximum DC collector current. Housed in a 3-pin TO-92 plastic package with through-hole mounting. Operates within a temperature range of -55°C to 150°C, with a minimum DC current gain of 100. Maximum power dissipation is 900mW.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Category Bipolar Power
HTS Code 8541210095
Material Si
Mounting Through Hole
Cage Code SDM41
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541210080
Package/Case TO-92
AEC Qualified No
Configuration Single
Pin Pitch (mm) 1.31(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 3.7(Max)
Package Description Plastic Header Style Package
Package Family Name TO-92
Package Height (mm) 4.7(Max)
Package Length (mm) 4.7(Max)
Minimum DC Current Gain 100@1mA@5V|100@20mA@5V
Seated Plane Height (mm) 4.7(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 900mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.3A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 50(Min)MHz
Maximum Collector Base Voltage 600V
Maximum Collector-Emitter Voltage 400V

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