TSM3N80CZ C0
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Краткое описание:
800V 3A N-CH MOSFET TO-220 Through Hole Power Transistor
Дополнительная информация
N-channel Power MOSFET, featuring 800V drain-source voltage and 3A continuous drain current. This through-hole component is housed in a TO-220 package with 3 pins and a tab, offering a maximum power dissipation of 94W. It operates within a temperature range of -55°C to 150°C and has a low gate threshold voltage of 4V.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.71(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.82(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.38(Max) |
| Package Length (mm) | 10.5(Max) |
| Seated Plane Height (mm) | 22.86(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 94000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 19nC |
| Typical Gate Charge @ Vgs | 19@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 4200@10VmOhm |
| Typical Input Capacitance @ Vds | 696@25VpF |
| Maximum Continuous Drain Current | 3A |
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