TSM4N90CI C0
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Краткое описание:
900V 4A N-CH Power MOSFET, TO-220, Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 4A continuous drain current. This single-element transistor is housed in an ITO-220 package with a 3-pin through-hole mounting configuration. Key specifications include a maximum gate threshold voltage of 4V, a typical gate charge of 25nC, and a maximum drain-source on-resistance of 4000mΩ at 10V. Maximum power dissipation is 38.7W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | ITO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.6 |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 38700mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 25nC |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 4000@10VmOhm |
| Typical Input Capacitance @ Vds | 955@25VpF |
| Maximum Continuous Drain Current | 4A |
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