TT8U1TR
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Краткое описание:
P-CH MOSFET, 20V, 2.4A, 8-Pin TSST SMT
Дополнительная информация
P-channel enhancement mode power MOSFET featuring 20V drain-source voltage and 2.4A continuous drain current. This single, dual-drain element transistor is constructed from silicon and offers a low 10.5mOhm maximum drain-source resistance at 4.5V. The component is housed in an 8-pin TSST surface-mount package with a 0.65mm pin pitch, measuring 3.10mm x 1.70mm x 0.80mm. Operating temperature range is -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TSST |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.70(Max) |
| Package Family Name | TSST |
| Package Height (mm) | 0.80(Max) |
| Package Length (mm) | 3.10(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.85(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 850@10VpF |
| Maximum Continuous Drain Current | 2.4A |
