UJ3C065030B3
Производится
Краткое описание:
UJ3C065030B3 - 650V, 30mΩ SiC Cascode FET in D2PAK-3L Package
Дополнительная информация
The UJ3C065030B3 is a high-performance Silicon Carbide (SiC) FET based on a unique cascode circuit configuration. It co-packages a normally-on SiC JFET with a cascode-optimized Si MOSFET to create a normally-off SiC FET device. This architecture allows for standard gate-drive characteristics (0V to 12V), enabling it to serve as a drop-in replacement for Silicon IGBTs, Silicon FETs, and SiC MOSFETs. The device features ultra-low gate charge and exceptional reverse recovery characteristics, making it suitable for high-frequency switching and inductive load applications.
| RoHS | Compliant (RoHS 3) |
| REACH | Compliant |
| Halogen Free | Yes |
| Power Dissipation (Pd) | 242W |
| Total Gate Charge (Qg) | 51nC |
| Input Capacitance (Ciss) | 1500pF |
| Gate-Source Voltage (Vgs) | ±25V |
| Drain-Source Voltage (Vds) | 650V |
| Operating Temperature Range | -55 to 175°C |
| Continuous Drain Current (Id) | 65A |
| Reverse Recovery Charge (Qrr) | 400nC |
| Drain-Source On-Resistance (Rds(on)) Max | 35mΩ |
| Drain-Source On-Resistance (Rds(on)) Typ | 27mΩ |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
