UMD6NTR
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Краткое описание:
NPN/PNP BJT Transistor, 50V, 100mA, 250MHz, SOT-363
Дополнительная информация
Dual NPN/PNP bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates across a wide temperature range from -55°C to 150°C with a 150mW power dissipation. Packaged in a 6-pin UMT6 (SC-88) SOT-363 surface-mount package, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-363 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
