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NPN BJT Transistor, 50V, 150mA, 180MHz, SOT-363
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and 150mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Packaged in a compact SC-88 (SOT-363) surface-mount case, this silicon transistor operates from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2mm |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-363 |
| Max Frequency | 100MHz |
| Current Rating | 150mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 150mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
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