US6M11TR
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Краткое описание:
Dual N|P Channel Enhancement MOSFET, 20V/12V, 1.5A/1.3A, TUMT-6
Дополнительная информация
The US6M11TR is a dual N|P channel enhancement MOSFET from Rohm, featuring a maximum drain source voltage of 20V for the N channel and 12V for the P channel. It can handle a maximum continuous drain current of 1.5A for the N channel and 1.3A for the P channel. The device is packaged in a TUMT-6 surface mount package, measuring 2.1mm in length, 1.8mm in width, and 0.82mm in height. It operates over a temperature range of -55°C to 150°C. The MOSFET is constructed from silicon material and has a maximum power dissipation of 1000mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | TUMT |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Package Width (mm) | 1.8(Max) |
| Package Height (mm) | 0.82(Max) |
| Package Length (mm) | 2.1(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]@N Channel|[email protected]@P ChannelnC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20@N Channel|12@P ChannelV |
| Maximum Drain Source Resistance | [email protected]@N Channel|[email protected]@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 110@10V@N Channel|290@6V@P ChannelpF |
| Maximum Continuous Drain Current | 1.5@N Channel|1.3@P ChannelA |
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