VDR15N650LS
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Краткое описание:
150 V N-Channel MOSFET, 19 A, 65 mΩ, TO-252
Дополнительная информация
This device is a 150 V N-channel enhancement-mode power MOSFET in a TO-252 package. It is rated for 19 A continuous drain current at Tc = 25 °C, 76 A pulsed drain current, and 50 W power dissipation. The MOSFET provides a maximum on-resistance of 65 mΩ at VGS = 10 V and 72 mΩ at VGS = 6 V, with typical total gate charge of 16.4 nC. It is AEC-Q101 qualified, supports fast-switching applications, and is specified as halogen- and antimony-free with RoHS compliance. The operating junction and storage temperature range is -55 °C to +150 °C.
| RoHS | Compliant |
| Aec-q101 | Qualified |
| Channel Type | N-Channel |
| Input Capacitance | 1041 typpF |
| Power Dissipation | 50W |
| Total Gate Charge | 16.4 typnC |
| Turn-On Rise Time | 34 typns |
| Output Capacitance | 67 typpF |
| Turn-Off Fall Time | 36.8 typns |
| Turn-On Delay Time | 9 typns |
| Gate-Source Voltage | ±25V |
| Turn-Off Delay Time | 13.6 typns |
| Drain-Source Voltage | 150V |
| Gate-to-Drain Charge | 2.7 typnC |
| Pulsed Drain Current | 76A |
| Gate-to-Source Charge | 6.2 typnC |
| Reverse Recovery Time | 79 typns |
| Gate Threshold Voltage | 3 typV |
| Reverse Recovery Charge | 176 typnC |
| Continuous Drain Current | 19A |
| Halogen And Antimony Free | Yes |
| Body Diode Forward Voltage | 1.3 maxV |
| On-Resistance Max at VGS=6V | 72mΩ |
| On-Resistance Max at VGS=10V | 65mΩ |
| Reverse Transfer Capacitance | 31 typpF |
| Continuous Drain Current at 100°C | 12A |
| Junction-to-Case Thermal Resistance | 2.5 max°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Junction-to-Ambient Thermal Resistance | 50 max°C/W |
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