VMMK-1225-BLKG
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Краткое описание:
RF FET, GaAs, 12GHz, 5V, 1dB NF, 11dB Gain, SMD
Дополнительная информация
RF Small Signal Field-Effect Transistor, L-Band, Gallium Arsenide (GaAs) technology, N-Channel, High Electron Mobility FET. Features low noise amplifier type with a 1dB noise figure and 11dB gain at 12GHz operating frequency. Designed for surface mount applications with a subminiature, leadless package (0402 case code) measuring 1.09mm length, 0.585mm width, and 0.25mm height. Supports up to 5V drain-to-source voltage and 50mA continuous drain current, with a maximum operating frequency of 26GHz and 250mW power dissipation. RoHS compliant.
| Gain | 11dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.585mm |
| Height | 0.275mm |
| Length | 1.09mm |
| Frequency | 12GHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Technology | GAAS |
| Termination | SMD/SMT |
| Noise Figure | 1dB |
| Package/Case | SMD/SMT |
| Test Voltage | 2V |
| Max Frequency | 26GHz |
| Amplifier Type | LOW NOISE |
| RoHS Compliant | Yes |
| Voltage Rating | 5V |
| Package Quantity | 100 |
| Power Dissipation | 250mW |
| Operating Frequency | 12 GHz |
| Radiation Hardening | No |
| Case Code (Imperial) | 0402 |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Gate to Source Voltage (Vgs) | 1V |
| Continuous Drain Current (ID) | 50mA |
| Drain to Source Voltage (Vdss) | 5V |
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