VS-FB190SA10
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Краткое описание:
100V 190A N-CH MOSFET 5.4mR SOT-227
Дополнительная информация
N-channel MOSFET with 100V drain-source voltage and 190A continuous drain current. Features 5.4mR drain-to-source resistance and 6.5mR Rds On max. Operates with a nominal gate-source voltage of 3.3V and a threshold voltage of 3.3V. Offers fast switching with turn-on delay time of 45ns and fall time of 335ns. Housed in a SOT-227-4 package, this component supports chassis, surface, and screw mounting. Maximum power dissipation is 568W, with an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Chassis Mount, Surface Mount, Screw |
| Width | 25.7mm |
| Height | 12.3mm |
| Length | 38.3mm |
| Weight | 1.058219oz |
| Polarity | N-CHANNEL |
| Fall Time | 335ns |
| Packaging | Rail/Tube |
| Rds On Max | 6.5mR |
| Nominal Vgs | 3.3V |
| Package/Case | SOT-227-4 |
| RoHS Compliant | Yes |
| Package Quantity | 10 |
| Input Capacitance | 10.7nF |
| Threshold Voltage | 3.3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 181ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 568W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 190A |
| Drain to Source Voltage (Vdss) | 100V |
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