ZTX550STZ
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Краткое описание:
PNP BJT Transistor, 1A Ic, 45V Vceo, 150MHz, TO-92
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -1A and a collector-emitter breakdown voltage of 45V. Offers a transition frequency of 150MHz and a maximum power dissipation of 1W. Packaged in a TO-92 compatible E-LINE package with through-hole mounting. Operates across a wide temperature range from -55°C to 150°C. RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92 |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -250mV |
