ZTX618
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Краткое описание:
NPN BJT Transistor, 3.5A I(C), 20V V(CE), 140MHz f(T), TO-92
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V Collector-Emitter Breakdown Voltage (VCEO) and a 3.5A Continuous Collector Current. Operates with a 5V Emitter-Base Voltage (VEBO) and offers a 140MHz Gain Bandwidth Product. Housed in a TO-92 E-LINE package, this through-hole component supports a wide temperature range from -55°C to 200°C and has a maximum power dissipation of 1W. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 140MHz |
| Max Collector Current | 3.5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3.5A |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 255mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 210mV |
