ZTX855STOA

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ZTX855STOA - Diodes
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Краткое описание: NPN BJT TO-92 250V 4A 90MHz
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

The ZTX855STOA is a TO-92 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a collector base voltage of 250V. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 1.2W. The transistor has a gain bandwidth product of 90MHz and a maximum collector current of 4A. It is available in a package quantity of 2000 units, packaged in tape and reel format, and is not RoHS compliant.
RoHS Not Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity NPN
Packaging Tape and Reel
Package/Case TO-92
RoHS Compliant No
Package Quantity 2000
Transition Frequency 90MHz
Max Collector Current 4A
Max Power Dissipation 1.2W
Gain Bandwidth Product 90MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 4A
Collector Base Voltage (VCBO) 250V
Collector-emitter Voltage-Max 260mV
Collector Emitter Breakdown Voltage 150V

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