ZTX855STZ
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Краткое описание:
NPN BJT Transistor, 150V, 4A, TO-92, Through Hole
Дополнительная информация
NPN bipolar junction transistor featuring a 150V collector-emitter breakdown voltage and 4A continuous collector current. This silicon power transistor offers a maximum collector current of 4A, a collector-emitter saturation voltage of 210mV, and a transition frequency of 90MHz. Housed in a TO-92 compatible E-LINE package, it supports through-hole mounting and operates within a temperature range of -55°C to 200°C. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 150V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 90MHz |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 90MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 250V |
| Collector-emitter Voltage-Max | 260mV |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 210mV |
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