ZTX949STZ

ZTX949STZ - Diodes
Увеличить
Краткое описание: PNP BJT Transistor, 30V VCEO, 4.5A IC, 100MHz, TO-92

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a continuous collector current of -4.5A, a collector-emitter breakdown voltage of 30V, and a transition frequency of 100MHz. Housed in a TO-92 compatible E-LINE package with 3 pins. Offers a maximum power dissipation of 1.2W and operates within a temperature range of -55°C to 200°C. Lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Box
Package/Case TO-92
Max Frequency 100MHz
Current Rating -4.5A
RoHS Compliant Yes
DC Rated Voltage -30V
Package Quantity 2000
Power Dissipation 1.2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Collector Current 4.5A
Max Power Dissipation 1.2W
Gain Bandwidth Product 100MHz
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -4.5A
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 320mV
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V