ZVN2106GTA
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Краткое описание:
N-Channel MOSFET, 60V, 710mA, 2R, SOT-223
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a 60V Drain-Source Voltage (Vdss) and a continuous drain current of 710mA. Offers a low Drain-Source On-Resistance (Rds On) of 2 Ohms. This 1-element transistor is housed in a SOT-223 surface-mount package with 4 pins. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 2W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2R |
| Nominal Vgs | 2.4V |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Current Rating | 710mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 75pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 710mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
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