ZVN4310GTA
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Краткое описание:
100V N-Channel MOSFET, 1.7A ID, 540mR Rds(on), SOT-223
Дополнительная информация
N-Channel MOSFET, 100V Drain-Source Voltage (Vdss), 1.67A Continuous Drain Current (ID), and 540mR Max Drain-Source On Resistance (Rds On). This silicon Metal-oxide Semiconductor FET features a 1-element, 1-channel design in a SOT-223 surface-mount package. Key specifications include a 20V Gate-to-Source Voltage (Vgs), 3W Max Power Dissipation, and fast switching times with an 8ns Turn-On Delay Time and 16ns Fall Time. Operating temperature range is -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Current | 15A |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 540mR |
| Package/Case | SOT-223 |
| Current Rating | 1.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Input Capacitance | 350pF |
| Power Dissipation | 3W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 750mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.67A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
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